PART |
Description |
Maker |
HFDOM40MRXXX DOM40MR032 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB,真正的IDE接口模式3.3 / 5.0V工作
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Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
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DOM44KR032 HFDOM44KR192 DOM44KR016 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB,真正的IDE接口模式3.3 / 5.0V工作 40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB,真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co., Ltd.
|
KBE00S003M KBE00S003M-D411 |
1Gb NAND*2 256Mb Mobile SDRAM*2
|
Samsung Electronic
|
K9F1G08U0M-FIB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9 |
DSUB DBM25PK 1Gb Gb 1.8V NAND Flash Errata 1Gb的NAND闪存千兆1.8V的勘误表 Industrial Mid-Range Soldering Iron; Power Rating:60W; Tip Temperature:850 F; Features:Incls.: One 67D 1/4" Dia., 3-3/8" L Long-Tapered Diamond-Style Paragon Soldering Tip RoHS Compliant: Yes
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
KBE00S009M-D411 KBE00S009M-D4110 |
1Gb NAND x 2 256Mb Mobile SDRAM x 2 SPECIALTY MEMORY CIRCUIT, PBGA137
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
CY7C68034-56LTXC CY7C6803309 CY7C68034-56LFXC |
EZ-USB NX2LP-FlexFlexible USB NAND Flash Controller FLASH MEMORY DRIVE CONTROLLER, QCC56 EZ-USB NX2LP-Flex Flexible USB NAND Flash Controller
|
Cypress Semiconductor, Corp.
|
DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存 64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory 1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
HY27UF081G2A HY27UF161G2A-TPCS HY27UF161G2A-TPCB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 64M X 16 FLASH 3.3V PROM, 25000 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes 3.3V Differential Transceiver 8-PDIP -40 to 85 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 COILTRONICS RoHS Compliant: Yes 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
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Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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HFDOM40MRXXX DOM40MR016 DOM40MR032 DOM40MR064 DOM4 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating
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HANBIT[Hanbit Electronics Co.,Ltd]
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